Show Hamamatsu Avalanche Photo Diode 2903032650
This is all the information about APD 2903032650. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2903032650 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2903032650/2907032929 |
| Unit: |
#1833 (barcode 1309019380) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F08 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379 V |
| Dark current: |
7.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
108 |
| Position in Box: |
43 |
| EP1 batch: |
111 |
| EP1 batch after irradiation: |
10456 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.0247711 V T = -25 °C: 343.8020411 V |
| Voltage for Gain 150: |
T = +20 °C: 386.8443681 V T = -25 °C: 351.1451904 V |
| Voltage for Gain 200: |
T = +20 °C: 391.2132558 V T = -25 °C: 355.2775675 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.621309628 V-1 T = -25 °C: 4.995219669 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.081507721 V-1 T = -25 °C: 9.398123823 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.16270016 V-1 T = -25 °C: 14.76226933 V-1 |
| Break-through voltage: |
T = +20 °C: 407.1236514 V T = -25 °C: 370.8252089 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history