Show Hamamatsu Avalanche Photo Diode 2903032621
This is all the information about APD 2903032621. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2903032621 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A09 |
Break-through voltage: |
417 V |
Voltage for Gain 100 (T=+25°C): |
389.3 V |
Dark current: |
6.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
108 |
Position in Box: |
22 |
EP1 batch: |
110 |
EP1 batch after irradiation: |
10456 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 389.7708768 V T = -25 °C: 353.6517705 V |
Voltage for Gain 150: |
T = +20 °C: 397.6702668 V T = -25 °C: 361.214865 V |
Voltage for Gain 200: |
T = +20 °C: 402.0469331 V T = -25 °C: 365.4666229 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.657208881 V-1 T = -25 °C: 4.575895353 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.280789065 V-1 T = -25 °C: 9.108216586 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.47385297 V-1 T = -25 °C: 14.20908554 V-1 |
Break-through voltage: |
T = +20 °C: 416.9023132 V T = -25 °C: 380.6681629 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history