Show Hamamatsu Avalanche Photo Diode 2901032496
This is all the information about APD 2901032496. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2901032496 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2901032496/2312025141 |
| Unit: |
#1983 (barcode 1309018956) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C07 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.7 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
101 |
| Position in Box: |
45 |
| EP1 batch: |
99 |
| EP1 batch after irradiation: |
10451 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.321824 V T = -25 °C: 347.6422918 V |
| Voltage for Gain 150: |
T = +20 °C: 391.1605897 V T = -25 °C: 355.1675236 V |
| Voltage for Gain 200: |
T = +20 °C: 395.5298436 V T = -25 °C: 359.3415897 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.51839228 V-1 T = -25 °C: 5.12611816 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.833731564 V-1 T = -25 °C: 9.130878666 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.48086584 V-1 T = -25 °C: 14.49316025 V-1 |
| Break-through voltage: |
T = +20 °C: 410.5817409 V T = -25 °C: 374.3293135 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history