Show Hamamatsu Avalanche Photo Diode 2820032376
This is all the information about APD 2820032376. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2820032376 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2817032139/2820032376 |
| Unit: |
#3919 (barcode 1309040711) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C03 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.5 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
100 |
| Position in Box: |
2 |
| EP1 batch: |
96 |
| EP1 batch after irradiation: |
10449 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.2767593 V T = -25 °C: 343.1312925 V |
| Voltage for Gain 150: |
T = +20 °C: 386.1344722 V T = -25 °C: 350.5163826 V |
| Voltage for Gain 200: |
T = +20 °C: 390.5364558 V T = -25 °C: 354.6586503 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.478900988 V-1 T = -25 °C: 4.833807428 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.690063059 V-1 T = -25 °C: 9.884597456 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.99625224 V-1 T = -25 °C: 15.74196252 V-1 |
| Break-through voltage: |
T = +20 °C: 406.576302 V T = -25 °C: 370.294066 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history