Show Hamamatsu Avalanche Photo Diode 2909033050
This is all the information about APD 2909033050. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2909033050 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E14 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.4 V |
| Dark current: |
10.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
107 |
| Position in Box: |
29 |
| EP1 batch: |
109 |
| EP1 batch after irradiation: |
10454 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.0661144 V T = -25 °C: 342.9475224 V |
| Voltage for Gain 150: |
T = +20 °C: 385.8978767 V T = -25 °C: 350.279907 V |
| Voltage for Gain 200: |
T = +20 °C: 390.2727406 V T = -25 °C: 354.4016741 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.618374854 V-1 T = -25 °C: 4.976797274 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.03877532 V-1 T = -25 °C: 9.243655931 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.00997193 V-1 T = -25 °C: 16.51873215 V-1 |
| Break-through voltage: |
T = +20 °C: 405.8968085 V T = -25 °C: 369.5374798 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
