Show Hamamatsu Avalanche Photo Diode 2908032993
This is all the information about APD 2908032993. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2908032993 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2401025947/2908032993 |
| Unit: |
#2756 (barcode 1309027859) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E12 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.4 V |
| Dark current: |
13.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
106 |
| Position in Box: |
30 |
| EP1 batch: |
107 |
| EP1 batch after irradiation: |
10397 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.2302144 V T = -25 °C: 348.0883411 V |
| Voltage for Gain 150: |
T = +20 °C: 390.9942411 V T = -25 °C: 355.7505612 V |
| Voltage for Gain 200: |
T = +20 °C: 395.267809 V T = -25 °C: 358.7020195 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.514949903 V-1 T = -25 °C: 4.454774199 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.441999539 V-1 T = -25 °C: 27.01573763 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.42542353 V-1 T = -25 °C: 15.8724439 V-1 |
| Break-through voltage: |
T = +20 °C: 409.9905692 V T = -25 °C: 373.5456144 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history