Show Hamamatsu Avalanche Photo Diode 2908032990
This is all the information about APD 2908032990. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2908032990 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C10 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.5 V |
Dark current: |
9 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
106 |
Position in Box: |
27 |
EP1 batch: |
107 |
EP1 batch after irradiation: |
10397 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.1416571 V T = -25 °C: 346.8180919 V |
Voltage for Gain 150: |
T = +20 °C: 390.0044794 V T = -25 °C: 354.3327928 V |
Voltage for Gain 200: |
T = +20 °C: 394.3145123 V T = -25 °C: 358.5051573 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 3.63027322 V-1 T = -25 °C: 4.924812106 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.12957293 V-1 T = -25 °C: 9.26919813 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.32328969 V-1 T = -25 °C: 16.06794289 V-1 |
Break-through voltage: |
T = +20 °C: 409.8480872 V T = -25 °C: 372.4818141 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history