Show Hamamatsu Avalanche Photo Diode 2905032802
This is all the information about APD 2905032802. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2905032802 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D04 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
384.5 V |
Dark current: |
7.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
103 |
Position in Box: |
45 |
EP1 batch: |
102 |
EP1 batch after irradiation: |
10392 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 384.4278594 V T = -25 °C: 348.9138035 V |
Voltage for Gain 150: |
T = +20 °C: 392.2774981 V T = -25 °C: 356.3498652 V |
Voltage for Gain 200: |
T = +20 °C: 396.6373194 V T = -25 °C: 360.5232697 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.458509649 V-1 T = -25 °C: 4.921332839 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.744575821 V-1 T = -25 °C: 9.093391264 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.30929996 V-1 T = -25 °C: 16.19307503 V-1 |
Break-through voltage: |
T = +20 °C: 411.2886309 V T = -25 °C: 375.3688749 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history