Show Hamamatsu Avalanche Photo Diode 2905032799
This is all the information about APD 2905032799. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2905032799 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2905032799/0902009203 |
| Unit: |
#2159 (barcode 1309021253) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D09 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.7 V |
| Dark current: |
7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
103 |
| Position in Box: |
42 |
| EP1 batch: |
102 |
| EP1 batch after irradiation: |
10392 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.8544292 V T = -25 °C: 344.5963231 V |
| Voltage for Gain 150: |
T = +20 °C: 387.6729187 V T = -25 °C: 351.9204911 V |
| Voltage for Gain 200: |
T = +20 °C: 392.018604 V T = -25 °C: 356.0269171 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.669788736 V-1 T = -25 °C: 4.750062599 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.315661056 V-1 T = -25 °C: 9.658588673 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.51397313 V-1 T = -25 °C: 15.32930004 V-1 |
| Break-through voltage: |
T = +20 °C: 407.2016312 V T = -25 °C: 370.9636999 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history