Show Hamamatsu Avalanche Photo Diode 2905032779
This is all the information about APD 2905032779. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2905032779 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2905032779/2403026084 |
| Unit: |
#2076 (barcode 1309022502) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D01 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.4 V |
| Dark current: |
6.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
103 |
| Position in Box: |
22 |
| EP1 batch: |
101 |
| EP1 batch after irradiation: |
10392 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.0612706 V T = -25 °C: 347.4550763 V |
| Voltage for Gain 150: |
T = +20 °C: 390.9175492 V T = -25 °C: 354.8946958 V |
| Voltage for Gain 200: |
T = +20 °C: 395.2752227 V T = -25 °C: 359.060297 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.612445145 V-1 T = -25 °C: 4.754577433 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.143127296 V-1 T = -25 °C: 9.63712909 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.3999565 V-1 T = -25 °C: 15.37157414 V-1 |
| Break-through voltage: |
T = +20 °C: 410.0589842 V T = -25 °C: 373.9807849 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history