Show Hamamatsu Avalanche Photo Diode 2905032768
This is all the information about APD 2905032768. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2905032768 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2905032768/2906032865 |
| Unit: |
#2157 (barcode 1309021239) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E08 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380 V |
| Dark current: |
7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
103 |
| Position in Box: |
13 |
| EP1 batch: |
101 |
| EP1 batch after irradiation: |
10391 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.1132514 V T = -25 °C: 344.4441972 V |
| Voltage for Gain 150: |
T = +20 °C: 387.8949269 V T = -25 °C: 351.8429213 V |
| Voltage for Gain 200: |
T = +20 °C: 392.2207724 V T = -25 °C: 355.9760968 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.61401314 V-1 T = -25 °C: 4.768807964 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.164293413 V-1 T = -25 °C: 9.679772329 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.31380991 V-1 T = -25 °C: 15.39333183 V-1 |
| Break-through voltage: |
T = +20 °C: 407.8110163 V T = -25 °C: 371.4820175 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history