Show Hamamatsu Avalanche Photo Diode 2817032139
This is all the information about APD 2817032139. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2817032139 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2817032139/2820032376 |
| Unit: |
#3919 (barcode 1309040711) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F13 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379.3 V |
| Dark current: |
17.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
97 |
| Position in Box: |
16 |
| EP1 batch: |
92 |
| EP1 batch after irradiation: |
10445 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.5243278 V T = -25 °C: 343.1740845 V |
| Voltage for Gain 150: |
T = +20 °C: 386.3584896 V T = -25 °C: 350.5352571 V |
| Voltage for Gain 200: |
T = +20 °C: 390.7166077 V T = -25 °C: 354.6487004 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.461015872 V-1 T = -25 °C: 4.882122121 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.677906946 V-1 T = -25 °C: 9.032698388 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.13828167 V-1 T = -25 °C: 16.15315479 V-1 |
| Break-through voltage: |
T = +20 °C: 405.9476944 V T = -25 °C: 369.5512351 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history