Show Hamamatsu Avalanche Photo Diode 2816032099
This is all the information about APD 2816032099. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2816032099 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D14 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
386.1 V |
| Dark current: |
12.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
96 |
| Position in Box: |
49 |
| EP1 batch: |
91 |
| EP1 batch after irradiation: |
10391 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.4771772 V T = -25 °C: 350.6007274 V |
| Voltage for Gain 150: |
T = +20 °C: 394.2565831 V T = -25 °C: 358.0045672 V |
| Voltage for Gain 200: |
T = +20 °C: 398.5769005 V T = -25 °C: 362.1519707 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.466629023 V-1 T = -25 °C: 4.675655716 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.849002189 V-1 T = -25 °C: 9.463678801 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.55443226 V-1 T = -25 °C: 15.02448907 V-1 |
| Break-through voltage: |
T = +20 °C: 413.4061143 V T = -25 °C: 376.9112124 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
