Show Hamamatsu Avalanche Photo Diode 2815031971
This is all the information about APD 2815031971. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2815031971 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A06 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
388 V |
| Dark current: |
8.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
94 |
| Position in Box: |
49 |
| EP1 batch: |
88 |
| EP1 batch after irradiation: |
10389 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 388.5485417 V T = -25 °C: 352.5640277 V |
| Voltage for Gain 150: |
T = +20 °C: 396.3889717 V T = -25 °C: 360.0418177 V |
| Voltage for Gain 200: |
T = +20 °C: 400.7093856 V T = -25 °C: 364.2475621 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.415953953 V-1 T = -25 °C: 4.656757289 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.625560181 V-1 T = -25 °C: 9.262964032 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.06451175 V-1 T = -25 °C: 14.49102711 V-1 |
| Break-through voltage: |
T = +20 °C: 415.1206516 V T = -25 °C: 379.0533221 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
