Show Hamamatsu Avalanche Photo Diode 2812031747
This is all the information about APD 2812031747. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2812031747 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2814031853/2812031747 |
| Unit: |
#2573 (barcode 1309026982) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.7 V |
| Dark current: |
6.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
92 |
| Position in Box: |
33 |
| EP1 batch: |
84 |
| EP1 batch after irradiation: |
10444 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.8938296 V T = -25 °C: 343.7474022 V |
| Voltage for Gain 150: |
T = +20 °C: 386.7398077 V T = -25 °C: 351.0684411 V |
| Voltage for Gain 200: |
T = +20 °C: 391.108298 V T = -25 °C: 355.1819693 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.665077055 V-1 T = -25 °C: 5.057071211 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.234199375 V-1 T = -25 °C: 9.534322493 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.40922869 V-1 T = -25 °C: 15.12157344 V-1 |
| Break-through voltage: |
T = +20 °C: 406.3443682 V T = -25 °C: 370.2504067 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history