Show Hamamatsu Avalanche Photo Diode 2812031739
This is all the information about APD 2812031739. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2812031739 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B07 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
381 V |
| Dark current: |
7.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
92 |
| Position in Box: |
26 |
| EP1 batch: |
84 |
| EP1 batch after irradiation: |
10443 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.6439871 V T = -25 °C: 346.0398914 V |
| Voltage for Gain 150: |
T = +20 °C: 389.4821597 V T = -25 °C: 353.5624474 V |
| Voltage for Gain 200: |
T = +20 °C: 393.8402653 V T = -25 °C: 357.6883886 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.700815267 V-1 T = -25 °C: 4.858721913 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.498703436 V-1 T = -25 °C: 9.930317011 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.69496941 V-1 T = -25 °C: 15.62774064 V-1 |
| Break-through voltage: |
T = +20 °C: 408.6119545 V T = -25 °C: 372.536611 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
