Show Hamamatsu Avalanche Photo Diode 2810031595
This is all the information about APD 2810031595. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2810031595 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1913021241/2810031595 |
| Unit: |
#2919 (barcode 1309035151) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C02 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.8 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
90 |
| Position in Box: |
24 |
| EP1 batch: |
81 |
| EP1 batch after irradiation: |
10440 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.662251 V T = -25 °C: 343.4751862 V |
| Voltage for Gain 150: |
T = +20 °C: 386.517147 V T = -25 °C: 350.8561587 V |
| Voltage for Gain 200: |
T = +20 °C: 390.8878793 V T = -25 °C: 355.0001961 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.417295578 V-1 T = -25 °C: 4.767473273 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.533660027 V-1 T = -25 °C: 9.676966222 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.78465682 V-1 T = -25 °C: 15.24635286 V-1 |
| Break-through voltage: |
T = +20 °C: 406.0884624 V T = -25 °C: 370.4046754 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history