Show Hamamatsu Avalanche Photo Diode 2810031552
This is all the information about APD 2810031552. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2810031552 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B11 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
385.7 V |
| Dark current: |
12.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
89 |
| Position in Box: |
40 |
| EP1 batch: |
79 |
| EP1 batch after irradiation: |
10195 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.5859416 V T = -25 °C: 350.858092 V |
| Voltage for Gain 150: |
T = +20 °C: 394.4143949 V T = -25 °C: 358.3472587 V |
| Voltage for Gain 200: |
T = +20 °C: 398.7411807 V T = -25 °C: 362.5457171 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.40609937 V-1 T = -25 °C: 4.906634033 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.656012659 V-1 T = -25 °C: 9.033525021 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.18498638 V-1 T = -25 °C: 16.11496487 V-1 |
| Break-through voltage: |
T = +20 °C: 412.3303577 V T = -25 °C: 376.1108793 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
