Show Hamamatsu Avalanche Photo Diode 2809031504
This is all the information about APD 2809031504. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2809031504 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G09 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
382.7 V |
| Dark current: |
11.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
88 |
| Position in Box: |
49 |
| EP1 batch: |
78 |
| EP1 batch after irradiation: |
10194 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.2571517 V T = -25 °C: 346.7473315 V |
| Voltage for Gain 150: |
T = +20 °C: 390.0826886 V T = -25 °C: 354.1621711 V |
| Voltage for Gain 200: |
T = +20 °C: 394.4438342 V T = -25 °C: 358.3190655 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.52492722 V-1 T = -25 °C: 4.999853975 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.908772684 V-1 T = -25 °C: 9.283017563 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.55727398 V-1 T = -25 °C: 14.61109705 V-1 |
| Break-through voltage: |
T = +20 °C: 407.9587967 V T = -25 °C: 372.2042464 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
