Show Hamamatsu Avalanche Photo Diode 2808031417
This is all the information about APD 2808031417. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2808031417 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0819008690/2808031417 |
| Unit: |
#1602 (barcode 1309017058) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G10 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
385.9 V |
| Dark current: |
6.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
88 |
| Position in Box: |
3 |
| EP1 batch: |
77 |
| EP1 batch after irradiation: |
10193 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.1488105 V T = -25 °C: 349.329362 V |
| Voltage for Gain 150: |
T = +20 °C: 392.9755832 V T = -25 °C: 356.7805748 V |
| Voltage for Gain 200: |
T = +20 °C: 397.3187918 V T = -25 °C: 360.9428193 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.600191369 V-1 T = -25 °C: 4.755526521 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.090468948 V-1 T = -25 °C: 9.671174349 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.16436342 V-1 T = -25 °C: 15.33528833 V-1 |
| Break-through voltage: |
T = +20 °C: 412.3676236 V T = -25 °C: 376.0394986 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
