Show Hamamatsu Avalanche Photo Diode 2806031234
This is all the information about APD 2806031234. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2806031234 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D07 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.6 V |
| Dark current: |
7.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
44 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10072 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.0494721 V T = -25 °C: 342.8785076 V |
| Voltage for Gain 150: |
T = +20 °C: 385.8501042 V T = -25 °C: 350.1977247 V |
| Voltage for Gain 200: |
T = +20 °C: 390.2101525 V T = -25 °C: 354.3006156 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.515049049 V-1 T = -25 °C: 4.881565882 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.638403392 V-1 T = -25 °C: 9.752670852 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.47860418 V-1 T = -25 °C: 15.25622282 V-1 |
| Break-through voltage: |
T = +20 °C: 405.4223579 V T = -25 °C: 368.9990859 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
