Show Hamamatsu Avalanche Photo Diode 2801030840
This is all the information about APD 2801030840. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2801030840 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E10 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
376.2 V |
Dark current: |
6.8 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
83 |
Position in Box: |
35 |
EP1 batch: |
70 |
EP1 batch after irradiation: |
10186 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
26. Aug 2019 |
Sent for analysis after irradiation: |
02. Sep 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
28. Aug 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
31. Aug 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 376.567831 V T = -25 °C: 341.7068101 V |
Voltage for Gain 150: |
T = +20 °C: 384.3897033 V T = -25 °C: 348.9685852 V |
Voltage for Gain 200: |
T = +20 °C: 388.7482509 V T = -25 °C: 353.0629565 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.439938616 V-1 T = -25 °C: 5.23699655 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.645017046 V-1 T = -25 °C: 9.553684549 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.90005774 V-1 T = -25 °C: 15.36535729 V-1 |
Break-through voltage: |
T = +20 °C: 404.7325132 V T = -25 °C: 368.4091115 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history