Show Hamamatsu Avalanche Photo Diode 2801030836
This is all the information about APD 2801030836. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2801030836 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2801030836/2007021986 |
| Unit: |
#2128 (barcode 1309021741) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E14 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.5 V |
| Dark current: |
11.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
83 |
| Position in Box: |
32 |
| EP1 batch: |
70 |
| EP1 batch after irradiation: |
10186 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.515492 V T = -25 °C: 343.4287534 V |
| Voltage for Gain 150: |
T = +20 °C: 386.4043949 V T = -25 °C: 350.7922812 V |
| Voltage for Gain 200: |
T = +20 °C: 390.7951559 V T = -25 °C: 354.9114903 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.425341908 V-1 T = -25 °C: 4.74430281 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.516528363 V-1 T = -25 °C: 9.6353994 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.63247898 V-1 T = -25 °C: 15.37688662 V-1 |
| Break-through voltage: |
T = +20 °C: 406.2454371 V T = -25 °C: 369.9328042 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
