Show Hamamatsu Avalanche Photo Diode 2710030755
This is all the information about APD 2710030755. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2710030755 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2310024981/2710030755 |
| Unit: |
#3518 (barcode 1309040117) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C09 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.9 V |
| Dark current: |
14.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
82 |
| Position in Box: |
15 |
| EP1 batch: |
68 |
| EP1 batch after irradiation: |
10184 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.0539876 V T = -25 °C: 348.3989894 V |
| Voltage for Gain 150: |
T = +20 °C: 391.9656647 V T = -25 °C: 355.842282 V |
| Voltage for Gain 200: |
T = +20 °C: 396.3789653 V T = -25 °C: 360.0024921 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.525236123 V-1 T = -25 °C: 4.698499507 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.78847276 V-1 T = -25 °C: 9.428345101 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.28637725 V-1 T = -25 °C: 15.00188548 V-1 |
| Break-through voltage: |
T = +20 °C: 411.4050987 V T = -25 °C: 374.8338711 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
