Show Hamamatsu Avalanche Photo Diode 2708030632
This is all the information about APD 2708030632. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2708030632 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B03 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383 V |
| Dark current: |
6.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
80 |
| Position in Box: |
44 |
| EP1 batch: |
66 |
| EP1 batch after irradiation: |
10182 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.8827441 V T = -25 °C: 347.4547953 V |
| Voltage for Gain 150: |
T = +20 °C: 390.8032995 V T = -25 °C: 354.9150361 V |
| Voltage for Gain 200: |
T = +20 °C: 395.2139682 V T = -25 °C: 359.1003852 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.601654952 V-1 T = -25 °C: 4.701089454 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.082572084 V-1 T = -25 °C: 9.47128075 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.08851265 V-1 T = -25 °C: 14.96787427 V-1 |
| Break-through voltage: |
T = +20 °C: 410.3619428 V T = -25 °C: 374.6613287 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
