Show Hamamatsu Avalanche Photo Diode 2610029915
This is all the information about APD 2610029915. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2610029915 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2518028930/2610029915 |
| Unit: |
#2842 (barcode 1309030323) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C12 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
376.9 V |
| Dark current: |
9.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
72 |
| Position in Box: |
16 |
| EP1 batch: |
53 |
| EP1 batch after irradiation: |
10169 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
26. Aug 2019 |
| Sent for analysis after irradiation: |
02. Sep 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
28. Aug 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
31. Aug 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.973972 V T = -25 °C: 341.8979692 V |
| Voltage for Gain 150: |
T = +20 °C: 384.7424094 V T = -25 °C: 349.1901532 V |
| Voltage for Gain 200: |
T = +20 °C: 389.0734447 V T = -25 °C: 353.2860804 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.682917206 V-1 T = -25 °C: 5.026472648 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.26472925 V-1 T = -25 °C: 9.420862623 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.4679709 V-1 T = -25 °C: 14.89492336 V-1 |
| Break-through voltage: |
T = +20 °C: 404.7351433 V T = -25 °C: 368.5472203 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
