Show Hamamatsu Avalanche Photo Diode 2608029770
This is all the information about APD 2608029770. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2608029770 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2608029770/2413026931 |
| Unit: |
#2566 (barcode 1309026913) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D06 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379 V |
| Dark current: |
11.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
70 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10071 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.9655319 V T = -25 °C: 343.7500841 V |
| Voltage for Gain 150: |
T = +20 °C: 386.8089583 V T = -25 °C: 351.060602 V |
| Voltage for Gain 200: |
T = +20 °C: 391.1840628 V T = -25 °C: 355.2036183 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.587986177 V-1 T = -25 °C: 5.045636136 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.971462015 V-1 T = -25 °C: 9.519875375 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.2254196 V-1 T = -25 °C: 14.00735984 V-1 |
| Break-through voltage: |
T = +20 °C: 406.4850472 V T = -25 °C: 370.2229517 V |
| |
|
| Notes: |
foam
|
Characteristics
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Measurement |
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Progression of the current during irradiation
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Version history
