Show Hamamatsu Avalanche Photo Diode 2608029762
This is all the information about APD 2608029762. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2608029762 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2608029762/2802030952 |
| Unit: |
#3286 (barcode 1309029006) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H07 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
380.6 V |
| Dark current: |
9.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
44 |
| Position in Box: |
42 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10072 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
24. Jul 2018 |
| Sent for analysis after irradiation: |
21. Aug 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Aug 2018 |
| Dose used: |
30 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Aug 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.3993084 V T = -25 °C: 345.4087404 V |
| Voltage for Gain 150: |
T = +20 °C: 388.29399 V T = -25 °C: 352.849902 V |
| Voltage for Gain 200: |
T = +20 °C: 392.7126143 V T = -25 °C: 357.0337347 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.653618669 V-1 T = -25 °C: 4.963855216 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.955560301 V-1 T = -25 °C: 9.064176964 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.10184996 V-1 T = -25 °C: 15.34400576 V-1 |
| Break-through voltage: |
T = +20 °C: 407.2152186 V T = -25 °C: 371.8923379 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
