Show Hamamatsu Avalanche Photo Diode 2520029116
This is all the information about APD 2520029116. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2520029116 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2520029116/2514028607 |
| Unit: |
#3189 (barcode 1309031580) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E13 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
377.8 V |
| Dark current: |
6.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
286 |
| Position in Box: |
30 |
| EP1 batch: |
103 |
| EP1 batch after irradiation: |
10437 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.8937047 V T = -25 °C: 342.7324849 V |
| Voltage for Gain 150: |
T = +20 °C: 385.7578786 V T = -25 °C: 350.1021521 V |
| Voltage for Gain 200: |
T = +20 °C: 390.141348 V T = -25 °C: 354.2535392 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.626629742 V-1 T = -25 °C: 5.005351641 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.112465265 V-1 T = -25 °C: 9.325314092 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.12071126 V-1 T = -25 °C: 14.67129385 V-1 |
| Break-through voltage: |
T = +20 °C: 405.9521621 V T = -25 °C: 369.7007766 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history