Show Hamamatsu Avalanche Photo Diode 2520029110
This is all the information about APD 2520029110. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2520029110 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2508028143/2520029110 |
| Unit: |
#934 (barcode 1309010264) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B08 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.7 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
69 |
| Position in Box: |
17 |
| EP1 batch: |
49 |
| EP1 batch after irradiation: |
10196 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.060748 V T = -25 °C: 345.6763009 V |
| Voltage for Gain 150: |
T = +20 °C: 388.8709868 V T = -25 °C: 353.0526894 V |
| Voltage for Gain 200: |
T = +20 °C: 393.2386189 V T = -25 °C: 357.2253976 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.595302687 V-1 T = -25 °C: 4.685944413 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.054459303 V-1 T = -25 °C: 9.360748556 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.07417201 V-1 T = -25 °C: 14.63299155 V-1 |
| Break-through voltage: |
T = +20 °C: 407.9359164 V T = -25 °C: 371.8397708 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
