Show Hamamatsu Avalanche Photo Diode 2520029095
This is all the information about APD 2520029095. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2520029095 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2405026259/2520029095 |
| Unit: |
#2074 (barcode 1309022489) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A08 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383 V |
| Dark current: |
3.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
69 |
| Position in Box: |
2 |
| EP1 batch: |
49 |
| EP1 batch after irradiation: |
10196 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.0145111 V T = -25 °C: 347.4147428 V |
| Voltage for Gain 150: |
T = +20 °C: 390.9017479 V T = -25 °C: 354.8672176 V |
| Voltage for Gain 200: |
T = +20 °C: 395.2877217 V T = -25 °C: 359.0642691 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.564713955 V-1 T = -25 °C: 4.713785387 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.004354818 V-1 T = -25 °C: 9.506620024 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.96963473 V-1 T = -25 °C: 14.96520334 V-1 |
| Break-through voltage: |
T = +20 °C: 410.6119262 V T = -25 °C: 374.6707782 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history