Show Hamamatsu Avalanche Photo Diode 2520029084
This is all the information about APD 2520029084. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2520029084 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
382.7 V |
| Dark current: |
4.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
68 |
| Position in Box: |
41 |
| EP1 batch: |
48 |
| EP1 batch after irradiation: |
10138 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.795491 V T = -25 °C: 347.1678092 V |
| Voltage for Gain 150: |
T = +20 °C: 390.6874946 V T = -25 °C: 354.6218576 V |
| Voltage for Gain 200: |
T = +20 °C: 395.0675692 V T = -25 °C: 358.7958173 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.63939067 V-1 T = -25 °C: 4.839344717 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.202825975 V-1 T = -25 °C: 9.729031206 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.22008858 V-1 T = -25 °C: 15.43976519 V-1 |
| Break-through voltage: |
T = +20 °C: 410.318855 V T = -25 °C: 374.1007367 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
