Show Hamamatsu Avalanche Photo Diode 0801007273
					
					This is all the information about APD 0801007273. If it is wrong, edit the data.
					
						
							| Subdetector specification: | 
							  | 
						
						
							| Serial: | 
							0801007273 | 
						
						
							| Type: | 
							Hamamatsu Avalanche Photo Diode | 
						
						
							| Detector: | 
							unassigned | 
						
						
							| Unit: | 
							unassigned | 
						
						
							| Preamp: | 
							0 | 
						
						
							| Current location: | 
							Bochum | 
						
						
							|   | 
							  | 
						
						
							| Installation information: | 
							  | 
						
						
							| Label: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Manufacturer information: | 
							  | 
						
						
							| Wafer position: | 
							D14 | 
						
						
							| Break-through voltage: | 
							416 V | 
						
						
							| Voltage for Gain 100 (T=+25°C): | 
							387 V | 
						
						
							| Dark current: | 
							3.7 nA | 
						
						
							|   | 
							  | 
						
						
							| Screening Logistics: | 
							  | 
						
						
							| Available: | 
							Yes | 
						
						
							| Storage Box: | 
							54 | 
						
						
							| Position in Box: | 
							34 | 
						
						
							| EP1 batch: | 
							none | 
						
						
							| EP1 batch after irradiation: | 
							10081 | 
						
						
							|   | 
							  | 
						
						
							| Shipment: | 
							  | 
						
						
							| Grid number: | 
							none | 
						
						
							| Position in grid: | 
							none | 
						
						
							| Arrival for irradiation: | 
							18. Apr 2019 | 
						
						
							| Sent for analysis after irradiation: | 
							04. Jun 2019 | 
						
						
							| Return for assembly: | 
							none | 
						
						
							|   | 
							  | 
						
						
							| Irradiation: | 
							  | 
						
						
							| Date: | 
							29. May 2019 | 
						
						
							| Dose used: | 
							37 Gy | 
						
						
							| Temperature: | 
							20 °C | 
						
						
							| Position: | 
							none | 
						
						
							| Bias voltage: | 
							none      | 
						
						
							|   | 
							  | 
						
						
							| Annealing: | 
							  | 
						
						
							| Date: | 
							29. May 2019 | 
						
						
							| Temperature: | 
							80 °C | 
						
						
							| Duration: | 
							48 h | 
						
						
							|   | 
							  | 
						
						
							| Measurement results: | 
							  | 
						
						
							| Voltage for Gain 100: | 
							T = +20 °C: 387.3127904 V     T = -25 °C: 350.8534041 V | 
						
						
							| Voltage for Gain 150: | 
							T = +20 °C: 395.2386917 V     T = -25 °C: 358.4127986 V | 
						
						
							| Voltage for Gain 200: | 
							T = +20 °C: 399.6102293 V     T = -25 °C: 362.652351 V | 
						
						
							| Gain/Voltage slope at M = 100: | 
							T = +20 °C: 4.408892178 V-1     T = -25 °C: 4.823292453 V-1 | 
						
						
							| Gain/Voltage slope at M = 150: | 
							T = +20 °C: 8.486577268 V-1     T = -25 °C: 8.7744755 V-1 | 
						
						
							| Gain/Voltage slope at M = 200: | 
							T = +20 °C: 14.99294641 V-1     T = -25 °C: 15.29880824 V-1 | 
						
						
							| Break-through voltage: | 
							T = +20 °C: 415.4575853 V     T = -25 °C: 378.6438665 V | 
						
						
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							| Notes: | 
							
								
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					Characteristics
					
						
							| Temperature | 
							Measurement | 
							Notes | 
						
						
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					Progression of the current during irradiation
					
						
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