Show Hamamatsu Avalanche Photo Diode 2407026429
This is all the information about APD 2407026429. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2407026429 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
At GSI for QE measurement |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D02 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
387.8 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
11 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10017 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
12. Nov 2018 |
| Sent for analysis after irradiation: |
13. Dec 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
07. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.8935332 V T = -25 °C: 351.2940013 V |
| Voltage for Gain 150: |
T = +20 °C: 394.8332362 V T = -25 °C: 358.819606 V |
| Voltage for Gain 200: |
T = +20 °C: 399.2426452 V T = -25 °C: 363.0285289 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.617370368 V-1 T = -25 °C: 4.781844559 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.149260327 V-1 T = -25 °C: 9.629916174 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.24614771 V-1 T = -25 °C: 15.25702036 V-1 |
| Break-through voltage: |
T = +20 °C: 415.0222578 V T = -25 °C: 378.8454786 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
