Show Hamamatsu Avalanche Photo Diode 0801007267
This is all the information about APD 0801007267. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0801007267 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 0801007267/2710030786 |
| Unit: |
#2252 (barcode 1309022823) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.1 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
56 |
| Position in Box: |
18 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10083 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
18. Apr 2019 |
| Sent for analysis after irradiation: |
04. Jun 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
29. May 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
29. May 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.9851143 V T = -25 °C: 347.7939171 V |
| Voltage for Gain 150: |
T = +20 °C: 391.8301307 V T = -25 °C: 355.3589257 V |
| Voltage for Gain 200: |
T = +20 °C: 396.1672717 V T = -25 °C: 359.6169344 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.8900898 V-1 T = -25 °C: 4.31562036 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.942469036 V-1 T = -25 °C: 8.592745099 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.0185783 V-1 T = -25 °C: 15.76870762 V-1 |
| Break-through voltage: |
T = +20 °C: 410.8939354 V T = -25 °C: 374.8670788 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
