Show Hamamatsu Avalanche Photo Diode 2404026192
This is all the information about APD 2404026192. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2404026192 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
At GSI for QE measurement |
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|
| Installation information: |
|
| Label: |
none |
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|
| Manufacturer information: |
|
| Wafer position: |
E02 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.3 V |
| Dark current: |
3.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
8 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10012 |
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|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
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|
| Irradiation: |
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| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
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|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.4125137 V T = -25 °C: 349.0617561 V |
| Voltage for Gain 150: |
T = +20 °C: 392.3276773 V T = -25 °C: 356.5186016 V |
| Voltage for Gain 200: |
T = +20 °C: 396.8244709 V T = -25 °C: 360.8205961 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 3.928612854 V-1 T = -25 °C: 5.192393613 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.822150512 V-1 T = -25 °C: 8.820889471 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.25650838 V-1 T = -25 °C: 15.25696701 V-1 |
| Break-through voltage: |
T = +20 °C: 412.8016072 V T = -25 °C: 376.7203469 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history