Show Hamamatsu Avalanche Photo Diode 2401025909
This is all the information about APD 2401025909. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2401025909 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2401025909/2404026197 |
| Unit: |
#864 (barcode 1309009473) |
| Preamp: |
4520 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F12 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.2 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
5 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10008 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.3230916 V T = -25 °C: 344.7256109 V |
| Voltage for Gain 150: |
T = +20 °C: 388.1262684 V T = -25 °C: 352.1911983 V |
| Voltage for Gain 200: |
T = +20 °C: 392.4680022 V T = -25 °C: 356.3546749 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.416216795 V-1 T = -25 °C: 4.775574787 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.542545166 V-1 T = -25 °C: 8.985857619 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.32636631 V-1 T = -25 °C: 16.06540472 V-1 |
| Break-through voltage: |
T = +20 °C: 408.3521037 V T = -25 °C: 372.0609734 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history