Show Hamamatsu Avalanche Photo Diode 2320025876
This is all the information about APD 2320025876. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2320025876 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2320025876/2510028273 |
| Unit: |
#1318 (barcode 1309014682) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C05 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379.1 V |
| Dark current: |
7.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
5 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10007 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.7927851 V T = -25 °C: 343.9238368 V |
| Voltage for Gain 150: |
T = +20 °C: 386.6163884 V T = -25 °C: 351.2727721 V |
| Voltage for Gain 200: |
T = +20 °C: 390.9738678 V T = -25 °C: 355.4112521 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.729816804 V-1 T = -25 °C: 4.995863995 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.363660942 V-1 T = -25 °C: 9.27648277 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.58495577 V-1 T = -25 °C: 14.58340496 V-1 |
| Break-through voltage: |
T = +20 °C: 406.4988265 V T = -25 °C: 370.4666799 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history