Show Hamamatsu Avalanche Photo Diode 2320025870
This is all the information about APD 2320025870. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2320025870 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 3109034447/2320025870 |
| Unit: |
#2284 (barcode 1309024742) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F06 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.8 V |
| Dark current: |
5.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
5 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10007 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.4698096 V T = -25 °C: 344.2117102 V |
| Voltage for Gain 150: |
T = +20 °C: 387.2830512 V T = -25 °C: 351.6025134 V |
| Voltage for Gain 200: |
T = +20 °C: 391.651888 V T = -25 °C: 355.7410253 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.497598884 V-1 T = -25 °C: 4.860626016 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.73241993 V-1 T = -25 °C: 9.887150848 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.17551938 V-1 T = -25 °C: 15.74141699 V-1 |
| Break-through voltage: |
T = +20 °C: 407.5048467 V T = -25 °C: 371.1123855 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history