Show Hamamatsu Avalanche Photo Diode 2320025855
This is all the information about APD 2320025855. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2320025855 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2320025855/0915010085 |
| Unit: |
#1588 (barcode 1309016914) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H07 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.6 V |
| Dark current: |
4.7 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
4 |
| Position in Box: |
40 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10007 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.8839829 V T = -25 °C: 347.3512054 V |
| Voltage for Gain 150: |
T = +20 °C: 390.7399926 V T = -25 °C: 354.8108644 V |
| Voltage for Gain 200: |
T = +20 °C: 395.0957883 V T = -25 °C: 358.9813938 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.697070198 V-1 T = -25 °C: 4.768950629 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.290026351 V-1 T = -25 °C: 9.735941692 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.62996927 V-1 T = -25 °C: 15.42306489 V-1 |
| Break-through voltage: |
T = +20 °C: 409.7508151 V T = -25 °C: 373.8475889 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history