Show Hamamatsu Avalanche Photo Diode 2320025849
This is all the information about APD 2320025849. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2320025849 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
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|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H10 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
388.2 V |
| Dark current: |
6.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
4 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10007 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.6770878 V T = -25 °C: 351.9145948 V |
| Voltage for Gain 150: |
T = +20 °C: 395.5231181 V T = -25 °C: 359.3999548 V |
| Voltage for Gain 200: |
T = +20 °C: 399.8652473 V T = -25 °C: 363.5976508 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.396032653 V-1 T = -25 °C: 4.909455513 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.592380994 V-1 T = -25 °C: 9.058295606 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.02686512 V-1 T = -25 °C: 16.08198573 V-1 |
| Break-through voltage: |
T = +20 °C: 412.7180342 V T = -25 °C: 378.3906801 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
