Show Hamamatsu Avalanche Photo Diode 2320025841
This is all the information about APD 2320025841. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2320025841 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A07 |
| Break-through voltage: |
412 V |
| Voltage for Gain 100 (T=+25°C): |
383.1 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
4 |
| Position in Box: |
27 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10006 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 383.6842562 V T = -25 °C: 348.0125795 V |
| Voltage for Gain 150: |
T = +20 °C: 391.5952251 V T = -25 °C: 355.5557351 V |
| Voltage for Gain 200: |
T = +20 °C: 396.0196772 V T = -25 °C: 359.8255695 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.860416109 V-1 T = -25 °C: 4.924143087 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.272860254 V-1 T = -25 °C: 8.743398118 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.28809887 V-1 T = -25 °C: 13.96906992 V-1 |
| Break-through voltage: |
T = +20 °C: 409.9946843 V T = -25 °C: 374.8692974 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
