Show Hamamatsu Avalanche Photo Diode 2320025840
This is all the information about APD 2320025840. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2320025840 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2320025840/2411026746 |
| Unit: |
#1626 (barcode 1309014569) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.3 V |
| Dark current: |
6.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
4 |
| Position in Box: |
26 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10006 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.5065239 V T = -25 °C: 349.7577283 V |
| Voltage for Gain 150: |
T = +20 °C: 393.4201276 V T = -25 °C: 357.2571588 V |
| Voltage for Gain 200: |
T = +20 °C: 397.7293792 V T = -25 °C: 361.4475043 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.678679616 V-1 T = -25 °C: 4.835816184 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.758275296 V-1 T = -25 °C: 8.463535421 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.18273724 V-1 T = -25 °C: 15.69367539 V-1 |
| Break-through voltage: |
T = +20 °C: 411.6428294 V T = -25 °C: 375.6198233 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history