Show Hamamatsu Avalanche Photo Diode 2320025837
This is all the information about APD 2320025837. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2320025837 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
E15 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
384.4 V |
Dark current: |
9.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
4 |
Position in Box: |
24 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10006 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Sep 2018 |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.1449866 V T = -25 °C: 347.4104583 V |
Voltage for Gain 150: |
T = +20 °C: 390.9692579 V T = -25 °C: 354.8906726 V |
Voltage for Gain 200: |
T = +20 °C: 395.3440861 V T = -25 °C: 359.0537239 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.54548139 V-1 T = -25 °C: 4.620670446 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.775931092 V-1 T = -25 °C: 9.584468484 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.62829071 V-1 T = -25 °C: 15.29360273 V-1 |
Break-through voltage: |
T = +20 °C: 408.3451551 V T = -25 °C: 372.6224286 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history