Show Hamamatsu Avalanche Photo Diode 2319025808
This is all the information about APD 2319025808. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2319025808 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
At GSI for QE measurement |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G08 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383.8 V |
| Dark current: |
3.4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
4 |
| Position in Box: |
4 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10006 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Sep 2018 |
| Sent for analysis after irradiation: |
02. Oct 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Sep 2018 |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
28. Sep 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.9481591 V T = -25 °C: 347.7661758 V |
| Voltage for Gain 150: |
T = +20 °C: 390.7166684 V T = -25 °C: 355.0451044 V |
| Voltage for Gain 200: |
T = +20 °C: 395.0196192 V T = -25 °C: 359.1218255 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.663244193 V-1 T = -25 °C: 5.145406371 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.111032055 V-1 T = -25 °C: 9.111816037 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.09430549 V-1 T = -25 °C: 15.1353946 V-1 |
| Break-through voltage: |
T = +20 °C: 409.8592404 V T = -25 °C: 373.9880089 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history