Show Hamamatsu Avalanche Photo Diode 2517028879
This is all the information about APD 2517028879. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2517028879 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2517028879/2503027772 |
| Unit: |
#2200 (barcode 1309023424) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
H09 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
379.6 V |
| Dark current: |
8.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
65 |
| Position in Box: |
10 |
| EP1 batch: |
43 |
| EP1 batch after irradiation: |
10132 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.8761484 V T = -25 °C: 343.9381591 V |
| Voltage for Gain 150: |
T = +20 °C: 386.7238706 V T = -25 °C: 351.2891976 V |
| Voltage for Gain 200: |
T = +20 °C: 391.0870402 V T = -25 °C: 355.4067859 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.700780616 V-1 T = -25 °C: 4.966584078 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.192955714 V-1 T = -25 °C: 9.265211173 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.34951816 V-1 T = -25 °C: 14.62376168 V-1 |
| Break-through voltage: |
T = +20 °C: 405.6674792 V T = -25 °C: 369.7315355 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
