Show Hamamatsu Avalanche Photo Diode 2516028796
This is all the information about APD 2516028796. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2516028796 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 1910021071/2516028796 |
| Unit: |
#1202 (barcode 1309013210) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A08 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.9 V |
| Dark current: |
3.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
63 |
| Position in Box: |
33 |
| EP1 batch: |
40 |
| EP1 batch after irradiation: |
10198 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.9611015 V T = -25 °C: 343.907044 V |
| Voltage for Gain 150: |
T = +20 °C: 386.8240305 V T = -25 °C: 351.2912641 V |
| Voltage for Gain 200: |
T = +20 °C: 391.2105142 V T = -25 °C: 355.4522342 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.595349865 V-1 T = -25 °C: 4.924783146 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.048673929 V-1 T = -25 °C: 9.198039535 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.06881117 V-1 T = -25 °C: 16.3869905 V-1 |
| Break-through voltage: |
T = +20 °C: 404.2990993 V T = -25 °C: 370.9018567 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
