Show Hamamatsu Avalanche Photo Diode 2515028670
This is all the information about APD 2515028670. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2515028670 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2515028670/2517028838 |
| Unit: |
#3074 (barcode 1309027354) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E04 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378.2 V |
| Dark current: |
4 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
61 |
| Position in Box: |
20 |
| EP1 batch: |
37 |
| EP1 batch after irradiation: |
10127 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.2611292 V T = -25 °C: 343.173063 V |
| Voltage for Gain 150: |
T = +20 °C: 386.0638455 V T = -25 °C: 350.4432829 V |
| Voltage for Gain 200: |
T = +20 °C: 390.4178266 V T = -25 °C: 354.5060411 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.594476407 V-1 T = -25 °C: 4.961223861 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.121322094 V-1 T = -25 °C: 9.405651684 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.30764812 V-1 T = -25 °C: 15.0907133 V-1 |
| Break-through voltage: |
T = +20 °C: 406.8952086 V T = -25 °C: 369.7202685 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
