Show Hamamatsu Avalanche Photo Diode 2510028313
This is all the information about APD 2510028313. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2510028313 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2515028727/2510028313 |
| Unit: |
#3352 (barcode 1309038619) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.9 V |
| Dark current: |
6.8 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
172 |
| Position in Box: |
43 |
| EP1 batch: |
28 |
| EP1 batch after irradiation: |
10117 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jul 2019 |
| Sent for analysis after irradiation: |
19. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
16. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
17. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 384.582247 V T = -25 °C: 348.9508496 V |
| Voltage for Gain 150: |
T = +20 °C: 392.4105527 V T = -25 °C: 356.4023896 V |
| Voltage for Gain 200: |
T = +20 °C: 396.7525653 V T = -25 °C: 360.5809874 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.411473407 V-1 T = -25 °C: 4.841086284 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.818971379 V-1 T = -25 °C: 9.162876519 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.58285573 V-1 T = -25 °C: 14.51198527 V-1 |
| Break-through voltage: |
T = +20 °C: 412.3157482 V T = -25 °C: 376.186056 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history