Show Hamamatsu Avalanche Photo Diode 2505027965
This is all the information about APD 2505027965. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2505027965 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2410026684/2505027965 |
| Unit: |
#2298 (barcode 1309031795) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B08 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.2 V |
| Dark current: |
8.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
177 |
| Position in Box: |
22 |
| EP1 batch: |
19 |
| EP1 batch after irradiation: |
10102 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
02. Jul 2019 |
| Sent for analysis after irradiation: |
09. Jul 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
04. Jul 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
05. Jul 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.7789053 V T = -25 °C: 349.8514027 V |
| Voltage for Gain 150: |
T = +20 °C: 393.5738198 V T = -25 °C: 357.2786118 V |
| Voltage for Gain 200: |
T = +20 °C: 397.8988676 V T = -25 °C: 361.4690964 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.687259325 V-1 T = -25 °C: 4.954097001 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.630245508 V-1 T = -25 °C: 9.252264982 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.06867875 V-1 T = -25 °C: 14.56970984 V-1 |
| Break-through voltage: |
T = +20 °C: 412.83125 V T = -25 °C: 376.1129847 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history